By J. H Poynting and J. J. Thomson
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Extra info for A text-book of physics: Sound (Fourth Edition)
12. E. Simoen, and C. Claeys, On the flicker noise in submicron silicon MOSFETs, SolidState Electron. 43, 865-882 (1999). 13. P. Gaubert, A. Teramoto, T. Hamada, M. Yamamoto, K. Kotani, and T. Ohmi, 1//f noise suppression of pMOSFETs fabricated on Si(110) and Si(100) using an alkali-free cleaning process, IEEE Trans. Electron Devices 53, 851-856, 2006. 14. M. -C. -E. Hellström, B. G. -L. Zhang, and M. 3 pMOSFETs, IEEE Trans. Electron Devices 50, 25132519 (2003). 15. L. K. J. Vandamme, Bulk and surface 1/f / noise, IEEE Trans.
8 depth z (nm) Figure 2-11. Oxide trap density vs. depth in the gate oxide (z = 0 at the oxide/channel interface). SUMMARY x A typical LF noise measurement setup consists of a bias circuit, a preamplifier and a spectrum analyzer. An oscilloscope can also be useful, especially in order to detect and study RTS noise. 2. Noise characterization 49 x The noise signal that one wants to measure is usually very small; the measurements can therefore easily be affected by external disturbances and noise generated from other elements than from the device-under-test.
The low-frequency noise was measured between 1 and 20 kHz. Chapter 2 48 An interfacial oxide, around 1-nm thick, was found to be present between the Al2O3 and the channel. As seen in Fig. 2-11, the trap density is higher in the bulk of the Al2O3 gate dielectrics than close to the SiO2/Al2O3 interface. This exercise is an example of the usefulness of low-frequency noise measurements to characterize slow oxide traps. This type of trap is difficult to analyze with other methods. Standard charge-pumping techniques probe traps in the middle of the bandgap and situated very close to the oxide/channel interface.
A text-book of physics: Sound (Fourth Edition) by J. H Poynting and J. J. Thomson